AUIRS21811S
Revision History
Date
hange b
Comment
8/6/08
9/8/08
CIC
CIC
First draft: all changes wrt AUIRS2181(4)(S) datasheet
Updated all references to IC name
Changed references of ton/toff to reflect requested 120ns/120ns spec
Updated expected I QBS and I QCC specs
Changed product summary topology to “Half-Bridge”
Changed product summary I O+ & I O- from typ values to min values
Removed reference to deadtime in the product summary
Removed typical applications section
Removed references to other parts in feature comparison section
Changed V IN from 2.7V min to 2.5V min
Changed V OH from 1.2V max to 1.4V max
Changed V OL from 0.1V max to 0.2V max
Updated functional block diagrams
Updated lead definitions and lead assignments, added device label for lead assignmen
Added typical application diagram section
Added simplified block diagram section
Added input/output pin equivalent diagrams
Added in application info and additional details section
Added in parameter temperature trend section
10/31/08
2/24/09
2/26/09
CIC
CIC
CIC
Changed VB max to 620V (align with rest of 20V clamp drivers spec)
Updated the qual table (showing “TBD” for ESD/LU ratings)
Removed IRS218114
3/10/09
CIC
Removed Simplified Bock Diagram
Removed Typical Application Diagram
Removed Parameter Temp Trend Section
Updated page number references
3/23/09
5/20/09
CIC
CIC
Changed Io+/- units to A from mA
Added ESD and LU ratings
6/9/09
APBU
Front page: “Logic and power ground +/- 5V offset” sentence erased (only one
ground exists).
Page 3: “designed for minimum driver cross-conduction” sentence erased.
Page 5, 6, 8: Vss related sentences erased or modified (Vss does not exist).
7/17/09
CIC
Removed min spec on Io+/- parameters
Changed typ ton/toff to 135ns
9/08/09
APBU
Added Typical Applications on front page, Extended Feature comparison table,
added junction temperature range in Dynamic and Static electrical characteristic
tables.
9/14/09
9/15/09
9/16/09
9/16/09
9/17/09
10/6/09
10/08/09
10/09/09
www.irf.com
APBU
APBU
APBU
CIC
CIC
APBU
APBU
APBU
Added tri-temp plots, added ESD passing threshold voltage, corrected I O+/- & T on/off
typical value on front page to be consistent with data in table
Corrected list of Typical Applications on front page
Dyn el. Char table: Max turn on and off prop. Delay changed from 180 ns to 210 ns,
removed temperature range from Statics and Dynamic Electrical Characteristic
tables
Change the year to 2009 in header
Separated Marking info and order info in two pages
Fixed ESD passing thresholds
LU rating to “tbd”, added SOA page, updated marking, updated table of content,
added guaranteed by design note for IO+/- parameters, removed typ. t r /t f ,
Removed SOA page and updated table of content.
Changed Max turn on/off to 230ns to allow for tri-temp variations
? 2009 International Rectifier
19
相关PDF资料
AUIRS2181S IC DRIVER HIGH/LOW SIDE 8SOIC
AUIRS21844S IC DRIVER HALF-BRIDGE 14NSOIC
AUIRS2191S IC DRIVER HIGH/LOW SIDE 16NSOIC
AUIRS2301S IC DRIVER HIGH/LOW SIDE 8SOIC
AUIRS2302S IC DRIVER HALF-BRIDGE 8SOIC
AUIRS2336S IC GATE DRIVER HV 3PHASE 28SOIC
AUIRS4426S IC DRIVER LOW SIDE DUAL 8SOIC
AUIRS4427STR IC DRIVER LOW SIDE DUAL 8NSOIC
相关代理商/技术参数
AUIRS21811STR 功能描述:功率驱动器IC High Low Side DRVR 600V 160ns 1.9A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS21814S 功能描述:功率驱动器IC High Low Side DRVR 600V 160ns 1.9A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS21814STR 功能描述:功率驱动器IC High Low Side DRVR 600V 160ns 1.9A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS2181S 功能描述:功率驱动器IC High Low Side DRVR 600V 160ns 1.9A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS2181STR 功能描述:功率驱动器IC High Low Side DRVR 600V 160ns 1.9A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS21844S 功能描述:功率驱动器IC HALF BRDG DRVR Auto 600V 600ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS21844STR 功能描述:功率驱动器IC HALF BRDG DRVR Auto 600V 600ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS2184S 功能描述:功率驱动器IC HALF BRDG DRVR Auto 600V 600ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube